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Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications

机译：通道工程对用于射频应用的90nm NmOs晶体管的单位增益频率和噪声系数的影响

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R Srinivasan; Navakanta Bhat (senior Member;
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1. Impact of Gatelength on the Performance of InGaAs/InAs/InGaAs Composite Channel Dual Material Double Gate-High Electron Mobility Transistor Devices for High-Frequency Applications [J] . Nagarajan S., Korah Reeba, Kalavathy G. Maria Journal of Nanoelectronics and Optoelectronics . 2017,第12期

机译：Goatelength对高频应用的InGaAs / InAs / InGaAs复合通道双材料双栅极高电子移动性晶体管装置的影响
2. InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications [J] . Edward-Yi Chang, Chien-I Kuo, Heng-Tung Hsu, _Applied Physics Express . 2013,第3期

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3. Inversion channel HFET with unity current gain frequency of 14 GHz and surface emitting laser from a single epitaxial growth [J] . Kiely P.A., Evaldsson P.A. Electronics Letters . 1993,第17期

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4. Impact of channel engineering on unity gain frequency and noise-figure in 90nm NMOS transistor for RF applications [C] . Srinivasan, R., Navakanta Bhat . 2005

机译：通道工程对90nm NMOS晶体管射频应用中单位增益频率和噪声系数的影响
5. Self-Assembled Monolayer of Cycloalkyl-Terminated Phosphonic Acids: Structures and Applications for Interface Engineering of n-Channel Organic Thin Film Transistors [D] . Shan, Bowen. 2018

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6. Gain of Imaging Fidelity by Employing a Higher Number of Independent Transmit Channels Together with Slice-Selective Radio-Frequency (RF) Shimming at 7T [O] . Niravkumar Darji, Gopesh Patel, Oliver Speck 2014

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7. Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications [O] . Srinivasan R, Bhat Navakanta 2005

机译：射频工程中通道工程对90nm NMOS晶体管的单位增益频率和噪声系数的影响
8. SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures [R] . Patterson, Richard L., Hammoud, Almad 2009

机译：sOI N沟道场效应晶体管，CHT-NmOs80，适用于极端温度

Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications

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